【作者】:Qiuyue Yang,Yinglin Wang,Jie Liu,Jiangyang Liu,Yuan Gao*,Peng Sun,Zheng Jie,Tong Zhang,Yue Wang,Geyu Lu*
【题目】:Enhanced sensing response towards NO2 based on ordered mesoporous Zr-doped In2O3 with low operating temperature
【关键词】:Semiconductor oxides,Mesoporous In2O3,Zr-doping,Gas sensor,NO2
【版面信息】:SENSORS AND ACTUATORS B-CHEMICAL 241 (2017) 806-813
摘要:
Ordered mesoporous Zr-doped In2O3and undoped In2O3nanostructures were synthesized via nanocasting method which is an easy, repeatable and friendly route. Zr incorporation might lead to In2O3lattice deformation without destroying the original crystal structure and increased chemical adsorbed oxygen species. Gas sensors based on undoped and Zr-doped In2O3were fabricated and their NO2gas sensing properties were tested. The sensor performance was improved by Zr-doped strategy. The Zr-doped In2O3based sensor showed good response (169) toward 1 ppm NO2at the operating temperature of 75℃with low resistance of 23 k Omega and the detection limit was 20 ppb. Such favorable sensing performances endowed mesoporous Zr-doped In2O3with a potential application in the field of gas sensor. The enhanced sensing properties were mainly attributed to its mesoporous microstructures, increased chemical adsorbed oxygen and limited grain size by Zr-doping.